Transistor: N-MOSFET

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: SIRA10DP-T1-GE3
    Tootja: VISHAY
    Tootja tootekood: SIRA10DP-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0,00 € 0,00 € (KM-TA) 0.0 EUR

    0,00 €

    Seda kombinatsiooni ei eksisteeri.

    Lisa ostukorvi

    Spetsifikatsioon tootele Transistor: N-MOSFET

    Mounting SMD
    Case PowerPAK® SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage 30V
    Drain current 60A
    Pulsed drain current 140A
    Power dissipation 26W
    On-state resistance 5mΩ
    Gate charge 51nC