Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.8A; 40W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
SIRA01DP-T1-GE3
Tootja: VISHAY
Tootja tootekood: SIRA01DP-T1-GE3
Spetsifikatsioon tootele Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.8A; 40W
Mounting | SMD |
Case | PowerPAK® SO8 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | P-MOSFET |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | -30V |
Power dissipation | 40W |
On-state resistance | 8.2mΩ |
Gate charge | 112nC |