Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.8A; 40W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: SIRA01DP-T1-GE3
    Tootja: VISHAY
    Tootja tootekood: SIRA01DP-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Spetsifikatsioon tootele Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.8A; 40W

    Mounting SMD
    Case PowerPAK® SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage -30V
    Power dissipation 40W
    On-state resistance 8.2mΩ
    Gate charge 112nC