Transistor: N-MOSFET
Kordarv:
2000.0
Minimum quantity:
2000.0
Tootekood:
SIJH112E-T1-GE3
Tootja: VISHAY
Tootja tootekood: SIJH112E-T1-GE3
Spetsifikatsioon tootele Transistor: N-MOSFET
Mounting | SMD |
Case | PowerPAK® 8x8L |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 100V |
Drain current | 225A |
Pulsed drain current | 300A |
Power dissipation | 333W |
On-state resistance | 3.6mΩ |
Gate charge | 160nC |