Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; DPAK

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: SIHD2N80AE-GE3
    Tootja: VISHAY
    Tootja tootekood: SIHD2N80AE-GE3
    • Mounting
    • Case
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Version
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    2,01 € 2,01 € (KM-TA) 2.0100000000000002 EUR

    2,01 €

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    Spetsifikatsioon tootele Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; DPAK

    Mounting SMD
    Case DPAK, TO252
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Version ESD
    Drain-source voltage 800V
    Drain current 1.8A
    Pulsed drain current 3.6A
    Power dissipation 62.5W
    On-state resistance 2.5Ω
    Gate charge 10.5nC