Transistor: N-MOSFET
Kordarv:
3000.0
Minimum quantity:
3000.0
Tootekood:
SIDR610DP-T1-GE3
Tootja: VISHAY
Tootja tootekood: SIDR610DP-T1-GE3
Spetsifikatsioon tootele Transistor: N-MOSFET
Mounting | SMD |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 200V |
Pulsed drain current | 80A |
Power dissipation | 125W |
Gate charge | 38nC |