Transistor: N-MOSFET
Kordarv:
3000.0
Minimum quantity:
3000.0
Tootekood:
SIDR5802EP-T1-RE3
Tootja: VISHAY
Tootja tootekood: SIDR5802EP-T1-RE3
Spetsifikatsioon tootele Transistor: N-MOSFET
Mounting | SMD |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 80V |
Pulsed drain current | 300A |
Power dissipation | 150W |
On-state resistance | 4mΩ |
Gate charge | 60nC |