Transistor: P-MOSFET
Kordarv:
3000.0
Minimum quantity:
3000.0
Tootekood:
SIA817EDJ-T1-GE3
Tootja: VISHAY
Tootja tootekood: SIA817EDJ-T1-GE3
Spetsifikatsioon tootele Transistor: P-MOSFET
Mounting | SMD |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | P-MOSFET + Schottky |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | -30V |
Drain current | -4.5A |
Pulsed drain current | -15A |
Power dissipation | 6.5W |
On-state resistance | 125mΩ |
Gate charge | 23nC |