Transistor: N-MOSFET

    Kordarv: 6000.0
    Minimum quantity: 6000.0
    Tootekood: SIA112LDJ-T1-GE3
    Tootja: VISHAY
    Tootja tootekood: SIA112LDJ-T1-GE3
    • Mounting
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET

    Mounting SMD
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage 100V
    Drain current 8.8A
    Pulsed drain current 10A
    Power dissipation 15.6W
    On-state resistance 135mΩ
    Gate charge 11.8nC