Transistor: N-MOSFET
Kordarv:
6000.0
Minimum quantity:
6000.0
Tootekood:
SIA112LDJ-T1-GE3
Tootja: VISHAY
Tootja tootekood: SIA112LDJ-T1-GE3
Spetsifikatsioon tootele Transistor: N-MOSFET
Mounting | SMD |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 100V |
Drain current | 8.8A |
Pulsed drain current | 10A |
Power dissipation | 15.6W |
On-state resistance | 135mΩ |
Gate charge | 11.8nC |