Transistor: P-MOSFET
Kordarv:
3000.0
Minimum quantity:
3000.0
Tootekood:
SI8851EDB-T2-E1
Tootja: VISHAY
Tootja tootekood: SI8851EDB-T2-E1
Spetsifikatsioon tootele Transistor: P-MOSFET
Mounting | SMD |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | P-MOSFET |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | -20V |
Pulsed drain current | -80A |
Power dissipation | 3.1W |
Gate charge | 180nC |