Transistor: N-MOSFET
Kordarv:
3000.0
Minimum quantity:
3000.0
Tootekood:
SI8800EDB-T2-E1
Tootja: VISHAY
Tootja tootekood: SI8800EDB-T2-E1
Spetsifikatsioon tootele Transistor: N-MOSFET
Mounting | SMD |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 20V |
Drain current | 2.8A |
Pulsed drain current | 15A |
Power dissipation | 900mW |
On-state resistance | 150mΩ |
Gate charge | 8.3nC |