Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W
Kordarv:
3000.0
Minimum quantity:
3000.0
Tootekood:
SI7252DP-T1-GE3
Tootja: VISHAY
Tootja tootekood: SI7252DP-T1-GE3
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Spetsifikatsioon tootele Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W
Mounting | SMD |
Case | PowerPAK® SO8 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET x2 |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 100V |
Pulsed drain current | 80A |
Power dissipation | 29W |
On-state resistance | 21mΩ |
Gate charge | 27nC |