Dual MOSFET, Complementary N and P Channel, 40 V, 6.8 A, 0.0295 ohm, SOIC, Surface Mount

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: SI4599DY-T1-GE3
    Tootja: VISHAY
    Tootja tootekood: SI4599DY-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Number of pins
    • Technology
    • Drain-source voltage
    • Max operating temperature

    1,44 € 1,44 € (KM-TA) 1.44 EUR

    1,44 €

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    Spetsifikatsioon tootele Dual MOSFET, Complementary N and P Channel, 40 V, 6.8 A, 0.0295 ohm, SOIC, Surface Mount

    Mounting SMD
    Case SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N/P-MOSFET
    Kind of channel enhanced
    Number of pins 8
    Technology TrenchFET®
    Drain-source voltage 40/-40V
    Max operating temperature 150°C