Transistor: N-MOSFET

Kordarv: 1.0
Minimum quantity: 1.0
Tootekood: SI3458BDV-T1-GE3
Tootja: VISHAY
Tootja tootekood: SI3458BDV-T1-GE3
  • Mounting
  • Case
  • Kind of package
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

1,40 € 1,40 € (KM-TA) 1.4000000000000001 EUR

1,40 €

Seda kombinatsiooni ei eksisteeri.

Lisa ostukorvi

Product downloads

Spetsifikatsioon tootele Transistor: N-MOSFET

Mounting SMD
Case TSOP6
Kind of package reel, tape
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Technology TrenchFET®
Drain-source voltage 60V
Drain current 3.2A
Pulsed drain current 10A
Power dissipation 2.1W
On-state resistance 100mΩ
Gate charge 11nC