Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6

    Kordarv: 3000.0
    Minimum quantity: 3000.0
    Tootekood: SI3429EDV-T1-GE3
    Tootja: VISHAY
    Tootja tootekood: SI3429EDV-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance

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    Spetsifikatsioon tootele Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6

    Mounting SMD
    Case TSOP6
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Drain-source voltage -20V
    Drain current -8A
    Pulsed drain current -40A
    Power dissipation 2.7W
    On-state resistance 38mΩ