Transistor: N-MOSFET

    Kordarv: 2500.0
    Minimum quantity: 2500.0
    Tootekood: RS1P600BETB1
    Tootja: ROHM SEMICONDUCTOR
    Tootja tootekood: RS1P600BETB1
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET

    Mounting SMD
    Case HSOP8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 100V
    Drain current 60A
    Pulsed drain current 70A
    Power dissipation 35W
    On-state resistance 9.7mΩ
    Gate charge 33nC