Bipolar Transistor Array, Dual NPN, 50 V, 500 mA, 1000 hFE, SOIC
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
NCV1413BDR2G
Tootja: ONSEMI
Tootja tootekood: NCV1413BDR2G
Product downloads
Spetsifikatsioon tootele Bipolar Transistor Array, Dual NPN, 50 V, 500 mA, 1000 hFE, SOIC
Output current | 500mA |
Mounting | SMD |
Case | SO16 |
Type of integrated circuit | driver |
Operating temperature | -40...125°C |
Kind of package | reel, tape |
Number of channels | 7 |
Application | automotive industry, for inductive load |
Output voltage | 50V |
Input voltage | 30V |
Kind of integrated circuit | darlington, transistor array |
Max operating temperature | 150°C |