Transistor: IGBT; 2.5kV; 4A; 100W; SMPD; Features: high voltage

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: MMIX4G20N250
    Tootja: IXYS
    Tootja tootekood: MMIX4G20N250
    • Mounting
    • Case
    • Kind of package
    • Features of semiconductor devices
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

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    Spetsifikatsioon tootele Transistor: IGBT; 2.5kV; 4A; 100W; SMPD; Features: high voltage

    Mounting SMD
    Case SMPD
    Kind of package tube
    Features of semiconductor devices high voltage
    Turn-on time 217ns
    Power dissipation 100W
    Gate-emitter voltage ±20V
    Pulsed collector current 105A
    Topology H-bridge
    Collector current 4A
    Gate charge 53nC
    Collector-emitter voltage 2.5kV
    Turn-off time 1.066µs