Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
MMIX1T600N04T2
Tootja: IXYS
Tootja tootekood: MMIX1T600N04T2
Spetsifikatsioon tootele Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Mounting | SMD |
Case | SMPD |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | GigaMOS™, TrenchT2™ |
Drain-source voltage | 40V |
Drain current | 600A |
Pulsed drain current | 2kA |
Power dissipation | 830W |
On-state resistance | 1.3mΩ |
Reverse recovery time | 100ns |
Gate charge | 590nC |