Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
MKI100-12F8
Tootja: IXYS
Tootja tootekood: MKI100-12F8
Product downloads
Spetsifikatsioon tootele Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A
Case | E3-Pack |
Electrical mounting | Press-in PCB |
Mechanical mounting | screw |
Semiconductor structure | diode/transistor |
Max. off-state voltage | 1.2kV |
Technology | HiPerFRED™, NPT |
Type of module | IGBT |
Power dissipation | 640W |
Gate-emitter voltage | ±20V |
Pulsed collector current | 200A |
Topology | H-bridge |
Collector current | 125A |