Bipolar Transistor Array, NPN, 1.1 V, 500 mA, 1000 hFE, SOIC
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
MC1413DR2G
Tootja: ONSEMI
Tootja tootekood: MC1413DR2G
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Spetsifikatsioon tootele Bipolar Transistor Array, NPN, 1.1 V, 500 mA, 1000 hFE, SOIC
Max operating temperature | 85°C |