Silicon Carbide MOSFET, Single, N Channel, 5 A, 1.7 kV, 0.75 ohm, TO-247

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: LSIC1MO170E1000
    Tootja: LITTELFUSE
    Tootja tootekood: LSIC1MO170E1000
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge
    • Max operating temperature

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    Spetsifikatsioon tootele Silicon Carbide MOSFET, Single, N Channel, 5 A, 1.7 kV, 0.75 ohm, TO-247

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 1.7kV
    Drain current 3.5A
    Pulsed drain current 15A
    Power dissipation 54W
    On-state resistance 1Ω
    Gate charge 15nC
    Max operating temperature 150°C