Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
LGE3M80120B
Tootja: LUGUANG ELECTRONIC
Tootja tootekood: LGE3M80120B
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W
Mounting | THT |
Case | TO247-3 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | SiC |
Drain-source voltage | 1.2kV |
Drain current | 28A |
Pulsed drain current | 80A |
Power dissipation | 208W |
On-state resistance | 129mΩ |
Gate charge | 76nC |