Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
LGE3M45170Q
Tootja: LUGUANG ELECTRONIC
Tootja tootekood: LGE3M45170Q
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting | THT |
Case | TO247-4 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | SiC |
Drain-source voltage | 1.7kV |
Drain current | 48A |
Pulsed drain current | 160A |
Power dissipation | 520W |
On-state resistance | 90mΩ |
Gate charge | 54nC |