Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
LGE3M40065B
Tootja: LUGUANG ELECTRONIC
Tootja tootekood: LGE3M40065B
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Mounting | THT |
Case | TO247-3 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | SiC |
Drain-source voltage | 650V |
Drain current | 58A |
Pulsed drain current | 180A |
On-state resistance | 55mΩ |