Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
LGE3M28065Q
Tootja: LUGUANG ELECTRONIC
Tootja tootekood: LGE3M28065Q
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Mounting | THT |
Case | TO247-4 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | SiC |
Drain-source voltage | 650V |
Drain current | 67A |
Power dissipation | 326W |
On-state resistance | 39mΩ |
Gate charge | 163nC |