Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
LGE3M25120Q
Tootja: LUGUANG ELECTRONIC
Tootja tootekood: LGE3M25120Q
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W
Mounting | THT |
Case | TO247-4 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | SiC |
Drain-source voltage | 1.2kV |
Drain current | 60A |
Pulsed drain current | 200A |
Power dissipation | 370W |
On-state resistance | 43mΩ |
Gate charge | 54nC |