Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXTY1R4N120PHV
    Tootja: IXYS
    Tootja tootekood: IXTY1R4N120PHV
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W

    Mounting SMD
    Case TO252HV
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Technology Polar™
    Drain-source voltage 1.2kV
    Drain current 1.4A
    Pulsed drain current 3A
    Power dissipation 86W
    On-state resistance 13Ω
    Reverse recovery time 900ns
    Gate charge 24.8nC