Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXTH4N100L
    Tootja: IXYS
    Tootja tootekood: IXTH4N100L
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • Reverse recovery time
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices linear power mosfet
    Drain-source voltage 1kV
    Drain current 4A
    Power dissipation 290W
    Reverse recovery time 1.1µs
    Gate charge 75nC