Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXTH2N300P3HV
    Tootja: IXYS
    Tootja tootekood: IXTH2N300P3HV
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns

    Mounting THT
    Case TO247HV
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Drain-source voltage 3kV
    Drain current 2A
    Power dissipation 520W
    On-state resistance 21Ω
    Reverse recovery time 400ns
    Gate charge 73nC