Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXTF1R4N450
    Tootja: IXYS
    Tootja tootekood: IXTF1R4N450
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns

    Mounting THT
    Case ISOPLUS i4-pac™ x024c
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Drain-source voltage 4.5kV
    Drain current 1.4A
    Pulsed drain current 4.2A
    Power dissipation 190W
    On-state resistance 40Ω
    Reverse recovery time 660ns
    Gate charge 88nC