Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXTA130N10T7
    Tootja: IXYS
    Tootja tootekood: IXTA130N10T7
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A

    Mounting SMD
    Case TO263-7
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology TrenchMV™
    Drain-source voltage 100V
    Drain current 130A
    Pulsed drain current 350A
    Power dissipation 360W
    On-state resistance 9.1mΩ
    Reverse recovery time 77ns
    Gate charge 104nC