Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXBT10N170
    Tootja: IXYS
    Tootja tootekood: IXBT10N170
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

    13,17 € 13,17 € (KM-TA) 13.17 EUR

    13,17 €

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    Spetsifikatsioon tootele Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268

    Mounting SMD
    Case TO268
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 63ns
    Power dissipation 140W
    Gate-emitter voltage ±20V
    Pulsed collector current 40A
    Collector current 10A
    Gate charge 30nC
    Collector-emitter voltage 1.7kV
    Turn-off time 1.8µs