Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB

Kordarv: 1.0
Minimum quantity: 1.0
Tootekood: IRLB3813PBF
Tootja: Infineon (IRF)
Tootja tootekood: IRLB3813PBF
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Technology
  • Drain-source voltage
  • Drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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2,21 €

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Spetsifikatsioon tootele Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB

Mounting THT
Case TO220AB
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices logic level
Technology HEXFET®
Drain-source voltage 30V
Drain current 260A
Power dissipation 230W
On-state resistance 1.95mΩ
Gate charge 57nC