Gallium Nitride (GaN) Transistor, 600 V, 12.5 A, 0.14 ohm, 3.2 nC, PG-HSOF-8-3, Surface Mount
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
IGT60R190D1SATMA1-1
Tootja: INFINEON TECHNOLOGIES
Tootja tootekood: IGT60R190D1SATMA1
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Spetsifikatsioon tootele Gallium Nitride (GaN) Transistor, 600 V, 12.5 A, 0.14 ohm, 3.2 nC, PG-HSOF-8-3, Surface Mount
Number of pins | 8 |