Transistor: IGBT
Kordarv:
2500.0
Minimum quantity:
2500.0
Tootekood:
HGTD1N120BNS9A
Tootja: ONSEMI
Tootja tootekood: HGTD1N120BNS9A
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Spetsifikatsioon tootele Transistor: IGBT
Mounting | SMD |
Case | DPAK |
Kind of package | reel, tape |
Type of transistor | IGBT |
Power dissipation | 60W |
Gate-emitter voltage | ±20V |
Pulsed collector current | 6A |
Collector current | 2.7A |
Gate charge | 21nC |
Collector-emitter voltage | 1.2kV |