Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
GAN063-650WSAQ-1
Tootja: NEXPERIA
Tootja tootekood: GAN063-650WSAQ
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Spetsifikatsioon tootele Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole
| Number of pins | 3 |