Transistor: N-JFET/N-MOSFET; GaN; unipolar; cascode; 650V; 33.4A
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
GAN041-650WSBQ
Tootja: NEXPERIA
Tootja tootekood: GAN041-650WSBQ
Product downloads
Spetsifikatsioon tootele Transistor: N-JFET/N-MOSFET; GaN; unipolar; cascode; 650V; 33.4A
Mounting | THT |
Case | SOT429, TO247 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-JFET/N-MOSFET |
Technology | GaN |
Drain-source voltage | 650V |
Pulsed drain current | 240A |
Power dissipation | 187W |
On-state resistance | 35mΩ |
Gate charge | 22nC |
Kind of transistor | cascode |