Module: IGBT; diode/transistor; IGBT three-phase bridge; Ic: 10A

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: FP10R12W1T7B11BOMA1
    Tootja: INFINEON TECHNOLOGIES
    Tootja tootekood: FP10R12W1T7B11BOMA1
    • Case
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Technology
    • Type of module
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Topology
    • Topology
    • Collector current

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    Spetsifikatsioon tootele Module: IGBT; diode/transistor; IGBT three-phase bridge; Ic: 10A

    Case AG-EASY1B-2
    Electrical mounting Press-in PCB
    Mechanical mounting screw
    Semiconductor structure diode/transistor
    Max. off-state voltage 1.2kV
    Technology EasyPIM™ 1B
    Type of module IGBT
    Gate-emitter voltage ±20V
    Pulsed collector current 20A
    Topology IGBT three-phase bridge, NTC thermistor, three-phase diode bridge
    Collector current 10A