Transistor: N-MOSFET x2; unipolar; 30V; 0.17A; Idm: 0.8A; 0.4W
Kordarv:
1.0
Minimum quantity:
10000.0
Tootekood:
DMN63D8LDW-13
Tootja: DIODES INCORPORATED
Tootja tootekood: DMN63D8LDW-13
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET x2; unipolar; 30V; 0.17A; Idm: 0.8A; 0.4W
| Mounting | SMD |
| Case | SOT363 |
| Kind of package | reel, tape |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET x2 |
| Kind of channel | enhanced |
| Features of semiconductor devices | ESD protected gate |
| Drain-source voltage | 30V |
| Drain current | 170mA |
| Pulsed drain current | 800mA |
| Power dissipation | 400mW |
| On-state resistance | 4.5Ω |