Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W

Kordarv: 1.0
Minimum quantity: 1.0
Tootekood: BXW60M1K2J
Tootja: BRIDGELUX
Tootja tootekood: BXW60M1K2J
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • On-state resistance
  • Gate charge

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Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W

Mounting THT
Case TO247-4
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices Kelvin terminal
Technology SiC
Drain-source voltage 1.2kV
Drain current 60A
Pulsed drain current 240A
On-state resistance 80mΩ
Gate charge 170nC