Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: BUK7J1R4-40HX
    Tootja: NEXPERIA
    Tootja tootekood: BUK7J1R4-40HX
    • Mounting
    • Case
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Application
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W

    Mounting SMD
    Case PowerSO8, SOT1023
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology Trench
    Drain-source voltage 40V
    Application automotive industry
    Drain current 190A
    Pulsed drain current 600A
    Power dissipation 395W
    On-state resistance 1.4mΩ
    Gate charge 103nC