Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 600 A, 1.2 kV, Module
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
BSM600D12P3G001
Tootja: ROHM SEMICONDUCTOR
Tootja tootekood: BSM600D12P3G001
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Spetsifikatsioon tootele Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 600 A, 1.2 kV, Module
| Max operating temperature | 150°C |