Silicon Carbide Bipolar (BJT) Single Transistor, N Channel, 120 A, 1.2 kV, 2.7 V
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
BSM120D12P2C005
Tootja: ROHM SEMICONDUCTOR
Tootja tootekood: BSM120D12P2C005
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Spetsifikatsioon tootele Silicon Carbide Bipolar (BJT) Single Transistor, N Channel, 120 A, 1.2 kV, 2.7 V
| Max operating temperature | 150°C |