Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W

Kordarv: 1.0
Minimum quantity: 1.0
Tootekood: B2M035120YP
Tootja: BASiC SEMICONDUCTOR
Tootja tootekood: B2M035120YP
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W

Mounting THT
Case TO247PLUS-4
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices Kelvin terminal
Technology SiC
Drain-source voltage 1.2kV
Drain current 60A
Pulsed drain current 190A
Power dissipation 375W
On-state resistance 35mΩ
Gate charge 115nC