IGBT Single Transistor, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pins

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: AFGB40T65SQDN
    Tootja: ONSEMI
    Tootja tootekood: AFGB40T65SQDN
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Type of transistor
    • Number of pins
    • Application
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage

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    Spetsifikatsioon tootele IGBT Single Transistor, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pins

    Mounting SMD
    Case D2PAK
    Kind of package reel, tape
    Type of transistor IGBT
    Number of pins 3
    Application automotive industry
    Power dissipation 119W
    Gate-emitter voltage ±20V
    Pulsed collector current 160A
    Collector current 40A
    Gate charge 76nC
    Collector-emitter voltage 650V