IGBT Single Transistor, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pins
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
AFGB40T65SQDN
Tootja: ONSEMI
Tootja tootekood: AFGB40T65SQDN
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Spetsifikatsioon tootele IGBT Single Transistor, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pins
Mounting | SMD |
Case | D2PAK |
Kind of package | reel, tape |
Type of transistor | IGBT |
Number of pins | 3 |
Application | automotive industry |
Power dissipation | 119W |
Gate-emitter voltage | ±20V |
Pulsed collector current | 160A |
Collector current | 40A |
Gate charge | 76nC |
Collector-emitter voltage | 650V |